1 - 4 ? 2002 ixys all rights reserved vki 75-06 p1 ixys reserves the right to change limits, test conditions and dimensions. 234 features ? npt igbt technology low saturation voltage low switching losses square rbsoa, no latch up high short circuit capability positive temperature coefficient for easy parallelling mos input, voltage controlled ultra fast free wheeling diodes solderable pins for pcb mounting package with copper base plate advantages space savings reduced protection circuits package designed for wave soldering typical applications motor control - dc motor armature winding - dc motor excitation winding - synchronous motor excitation winding supply of transformer primary winding - power supplies - welding - x-ray - ups - battery charger i c25 = 69 a v ces = 600 v v ce(sat) typ. = 2.3 v igbt modules in eco-pac 2 h-bridge configuration short circuit soa capability square rbsoa preliminary data sheet igbts symbol conditions maximum ratings v ces t vj = 25c to 150c 600 v v ges 20 v i c25 t c = 25c 69 a i c80 t c = 80c 48 a i cm v ge = 15 v; r g = 22 ? ; t vj = 125c 100 a v cek rbsoa, clamped inductive load; l = 100 h v ces t sc v ce = v ces ; v ge = 15 v; r g = 22 ? ; t vj = 125c 10 s (scsoa) non-repetitive p tot t c = 25c 208 w symbol conditions characteristic values (t vj = 25 c, unless otherwise specified) min. typ. max. v ce(sat) i c = 75 a; v ge = 15 v; t vj = 25c 2.3 2.8 v t vj = 125c 2.8 v v ge(th) i c = 1 ma; v ge = v ce 4.5 6.5 v i ces v ce = v ces ;v ge = 0 v; t vj = 25c 0.8 ma t vj = 125c 4.4 ma i ges v ce = 0 v; v ge = 20 v 100 na t d(on) 50 ns t r 55 ns t d(off) 300 ns t f 30 ns e on 1.8 mj e off 1.4 mj c ies v ce = 25 v; v ge = 0 v; f = 1 mhz 2.8 nf r thjc (per igbt) 0.6 k/w r thjh with heatsink compound (0.42 k/m.k; 50 m) 1.2 k/w inductive load, t vj = 125c v ce = 300 v; i c = 40 a v ge = 15/0 v; r g = 22 ? pin arangement see outlines ntc f10 a 1 a 4 d 4 l 9 o 7 s18 k10 k13 h13 x18 t16 p18 n 9
2 - 4 ? 2002 ixys all rights reserved vki 75-06 p1 ixys reserves the right to change limits, test conditions and dimensions. 234 reverse diodes (fred) symbol conditions maximum ratings i f25 t c = 25c 56 a i f80 t c = 80c 35 a symbol conditions characteristic values min. typ. max. v f i f = 40 a; t vj = 25c 2.32 2.59 v t vj = 125c 1.58 v i rm i f = 30 a; di f /dt = 500 a/s; t vj = 125c 15 a t rr v r = 300 v; v ge = 0 v 70 ns r thjc 1.3 k/w r thjh with heatsink compound (0.42 k/m.k; 50 m) 2.6 k/w module symbol conditions maximum ratings t vj -40...+150 c t stg -40...+150 c v isol i isol 1 ma; 50/60 hz 3000 v~ m d mounting torque (m4) 1.5 - 2.0 nm 14 - 18 lb.in. a max. allowable acceleration 50 m/s 2 symbol conditions characteristic values min. typ. max. d s creepage distance on surface (pin to heatsink) 11.2 mm d a strike distance in air (pin to heatsink) 11.2 mm weight 24 g temperature sensor ntc symbol conditions characteristic values min. typ. max. r 25 t = 25c 455 470 485 k ? b 25/50 3474 k dimensions in mm (1 mm = 0.0394")
3 - 4 ? 2002 ixys all rights reserved vki 75-06 p1 ixys reserves the right to change limits, test conditions and dimensions. 234 fig. 1 typ. output characteristics fig. 2 typ. output characteristics fig. 3 typ. transfer characteristics fig. 4 typ. forward characteristics of free wheeling diode fig. 5 typ. turn on gate charge fig. 6 typ. turn off characteristics of free wheeling diode 0 200 400 600 800 1000 0 10 20 30 40 50 0 30 60 90 120 150 0123456 0 30 60 90 120 150 0 40 80 120 160 0 5 10 15 20 0123456 0 30 60 90 120 150 v ce = 300 v i c = 50 a v ce v i c v ce a i c v nc q g -di/dt v v ge i rm t rr a/ s i rm t rr 9v 11v a 9v 11v v ge = 17 v 15 v 13 v a 4 6 8 10 12 14 16 0 30 60 90 120 150 v v ge a i c t vj = 25c t vj = 125c 0,0 0,5 1,0 1,5 2,0 0 15 30 45 60 75 90 v v f i f t vj = 25c t vj = 125c a ns 42t60 42t60 42t60 42t60 42t60 42t60 t vj = 25c v ce = 20 v t vj = 125c v r = 300 v i f = 30 a v ge = 17 v 15 v 13 v t vj = 125c
4 - 4 ? 2002 ixys all rights reserved vki 75-06 p1 ixys reserves the right to change limits, test conditions and dimensions. 234 fig. 7 typ. turn on energy and switching fig. 8 typ. turn off energy and switching times versus collector current times versus collector current fig. 9 typ. turn on energy and switching fig. 10 typ. turn off energy and switching times versus gate resistor times versus gate resistor fig. 11 reverse biased safe operating area fig. 12 typ. transient thermal impedance rbsoa 04080120 0,0 2,5 5,0 7,5 10,0 0 25 50 75 100 04080120 0 1 2 3 4 0 100 200 300 400 0,00001 0,0001 0,001 0,01 0,1 1 10 0,0001 0,001 0,01 0,1 1 10 0 102030405060 0 1 2 3 0 200 400 600 0 102030405060 1 2 3 4 20 40 60 80 single pulse 0 100 200 300 400 500 600 700 0 30 60 90 120 e on t d(on) t r e off t d(off) t f e on t d(on) t r e off t d(off) t f i c a i c a e off e on t t r g ? r g ? v ce t s mj e on mj e off ns t ns t i cm k/w z thjc igbt v a mj ns ns mj 42t60 42t60 42t60 42t60 42t60 v ce = 300 v v ge = 15 v r g = 22 ? t vj = 125c v ce = 300 v v ge = 15 v i c = 50 a t vj = 125c r g = 22 ? t vj = 125c v ce = 300 v v ge = 15 v i c = 50 a t vj = 125c v ce = 300 v v ge = 15 v r g = 22 ? t vj = 125c vid...75-06p1 diode
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